2SC5245A no. a1074-1/8 features ? low-noise : nf=0.9db typ (f=1ghz) : nf=1.4db typ (f=1.5ghz) ? high gain : ? s21e ? 2 =10db typ (f=1.5ghz) ? high cut-off frequency : f t =8ghz typ ? low-voltage, low-current operation (v ce =1v, i c =1ma) : f t =3.5ghz typ : ? s21e ? 2 =5.5db typ (f=1.5ghz) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 1.5 v collector current i c 30 ma collector dissipation p c 150 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7023a-009 ordering number : ena1074a 71812 tkim/o2908ab msim tc-00001685 sanyo semiconductors data sheet 2SC5245A npn epitaxial planar silicon transistor uhf to s-band low-noise ampli er osc applications http:// semicon.sanyo.com/en/network product & package information ? package : mcp ? jeita, jedec : sc-70, sot-323 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection mn lot no. lot no. r a n k tl 1 : base 2 : emitter 3 : collector sanyo : mcp 3 12 2.0 0.425 0.425 0.3 0.65 2.1 0.9 1.25 0.3 0.2 0 to 0.08 0.15 2SC5245A-4-tl-e 3 2 1
2SC5245A no. a1074-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 1.0 a emitter cutoff current i ebo v eb =1v, i c =0a 10 a dc current gain h fe v ce =5v, i c =10ma 60* 270* gain-bandwidth product f t 1v ce =5v, i c =10ma 5 8 ghz f t 2v ce =1v, i c =1ma 3.5 ghz output capacitance cob v cb =10v, f=1mhz 0.45 0.7 pf reverse transfer capacitance cre 0.30 pf forward transfer gain ? s21e ? 2 1v ce =5v, i c =10ma, f=1.5ghz 8 10 db ? s21e ? 2 2v ce =1v, i c =1ma, f=1.5ghz 5.5 db noise figure nf1 v ce =5v, i c =5ma, f=1.5ghz 1.4 3.0 db nf2 v ce =2v, i c =3ma, f=1ghz 0.9 db * : the 2SC5245A is classi ed by 10ma hfe as follows : rank 3 4 5 h fe 60 to 120 90 to 180 135 to 270 ordering information device package shipping memo 2SC5245A-4-tl-e mcp 3,000pcs./reel pb free h fe -- i c collector current, i c -- ma dc current gain, h fe collector current, i c -- m a gain-bandwidth product, f t -- ghz f t -- i c 100 10 itr07984 3 5 3 2 1.0 7 3 5 2 0.1 72 10 5 7 100 2 3 5 7 5 7 5 2 3 v ce =5v it14098 1.0 23 3 57 10 5 2 7 5 1.0 3 2 10 2 v ce =5v v ce =1v
2SC5245A no. a1074-3/8 ? s21e ? 2 -- i c collector current, i c -- ma forward transfer gain, ? s21e ? 2 -- db collector dissipation, p c -- mw p c -- ta ambient temperature, ta -- c collector current, i c -- ma noise figure, nf -- db nf -- i c ? s21e ? 2 -- i c collector current, i c -- ma forward transfer gain, ? s21e ? 2 -- db collector current, i c -- ma noise figure, nf -- db nf -- i c 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 150 160 itr07992 10 12 8 6 4 2 0 7 f=1.5ghz 23 2 2 3 57 1.0 0.1 10 535 v ce =1v v ce =5v itr07990 10 12 8 6 4 2 0 7 v ce =2v f=1ghz 23 2 2 3 57 1.0 1.0 10 535 itr07991 itr07988 0 14 16 12 10 8 6 4 2 357 1.0 23 57 10 100 23 57 v ce =5v 1v 2v v ce =5v 1v 2v f=1.5ghz itr07989 0 14 16 12 10 8 6 4 2 357 1.0 23 57 10 100 23 57 f=1ghz cre -- v cb collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cre -- pf itr07986 f=1mhz itr07987 f=1mhz 3 5 3 2 1.0 7 3 5 2 0.1 7 72 10 5 3 5 3 2 1.0 7 3 5 2 0.1 7 72 10 5 1.0 0.1 2 3 5 7 5 7 5 2 3 1.0 0.1 2 3 5 7 5 7 5 2 3
2SC5245A no. a1074-4/8 s11e f=200mhz to 2000mhz(200mhz step) s21e f=200mhz to 2000mhz(200mhz step) s12e f=200mhz to 2000mhz(200mhz step) s22e f=200mhz to 2000mhz(200mhz step) j50 j25 j10 0 10 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 v ce =1v i c =1ma v ce =2v i c =3ma 2.0ghz 90 120 150 180 --150 --120 --90 --30 --60 0 60 30 16 20 12 8 4 0.2ghz 0.2ghz 2.0ghz v ce =1v i c =1ma v ce =5v i c =10ma 90 120 150 180 --150 --120 --90 --30 --60 0 60 30 0.04 0.08 0.16 0.12 0.2 0.2ghz 2.0ghz v ce =1v i c =1ma v ce =2v i c =3ma j50 j25 j10 0 10 25 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 2.0ghz 0.2ghz 50 v ce =5v i c =5ma itr07993 itr07994 itr07995 itr07996 0.2ghz 25 0.2ghz 0.2ghz 0.2ghz v ce =5v i c =5ma 2.0ghz 2.0ghz 2.0ghz v ce =5v i c =10ma v ce =5v i c =5ma 0.2ghz 0.2ghz v ce =2v i c =3ma 2.0ghz 2.0ghz 2.0ghz 2.0ghz 2.0ghz 2.0ghz v ce =5v i c =10ma v ce =5v i c =5ma 0.2ghz 0.2ghz 0.2ghz 0.2ghz 0.2ghz 0.2ghz v ce =5v i c =10ma v ce =1v i c =1ma v ce =2v i c =3ma 2.0ghz 2.0ghz 2.0ghz 50
2SC5245A no. a1074-5/8 s parameters (common emitter) v ce =5v, i c =5ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 200 0.763 -37.5 11.926 146.9 0.036 70.7 0.892 -19.1 400 0.590 -65.4 9.202 124.3 0.058 60.9 0.740 -29.1 600 0.456 -85.5 7.173 109.4 0.073 57.4 0.631 -33.7 800 0.374 -102.0 5.743 98.7 0.086 56.7 0.566 -35.8 1000 0.323 -115.0 4.785 90.5 0.098 56.7 0.528 -37.2 1200 0.288 -127.5 4.105 83.6 0.110 57.2 0.505 -38.4 1400 0.264 -137.7 3.599 77.5 0.123 57.7 0.488 -39.6 1600 0.248 -147.4 3.213 71.3 0.136 57.6 0.476 -41.2 1800 0.239 -156.9 2.905 66.4 0.150 57.6 0.466 -43.3 2000 0.235 -165.7 2.651 61.3 0.165 57.2 0.462 -45.4 v ce =5v, i c =10ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 200 0.605 -52.6 16.354 136.2 0.031 67.5 0.804 -23.9 400 0.417 -84.6 11.011 113.3 0.048 62.4 0.622 -30.5 600 0.319 -106.3 8.026 100.5 0.062 62.2 0.533 -32.0 800 0.266 -124.6 6.250 91.3 0.076 63.4 0.491 -32.4 1000 0.238 -136.5 5.115 84.7 0.090 64.3 0.469 -33.2 1200 0.225 -148.9 4.336 78.8 0.104 64.4 0.458 -34.6 1400 0.215 -158.3 3.813 73.4 0.119 64.5 0.449 -35.8 1600 0.213 -167.3 3.365 68.1 0.135 63.8 0.443 -37.7 1800 0.212 -175.6 3.030 63.5 0.150 63.1 0.436 -39.6 2000 0.216 -177.5 2.754 58.9 0.166 62.5 0.438 -41.9 v ce =2v, i c =3ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 200 0.842 -30.7 8.491 153.0 0.044 72.5 0.931 -17.1 400 0.704 -56.3 7.161 131.9 0.075 60.9 0.808 -28.8 600 0.579 -76.1 5.879 116.3 0.095 54.1 0.696 -36.2 800 0.480 -93.1 4.882 104.2 0.109 51.0 0.615 -40.6 1000 0.417 -106.3 4.154 95.0 0.121 49.3 0.564 -43.5 1200 0.376 -119.6 3.597 87.1 0.132 48.7 0.526 -45.8 1400 0.343 -130.2 3.212 80.2 0.143 48.6 0.496 -47.5 1600 0.319 -140.5 2.875 73.4 0.154 48.7 0.475 -49.6 1800 0.303 -150.0 2.604 67.7 0.166 48.6 0.461 -51.6 2000 0.298 -160.0 2.383 62.1 0.179 48.9 0.451 -52.9 v ce =1v, i c =1ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 200 0.945 -18.9 3.296 162.5 0.054 77.2 0.980 -11.0 400 0.884 -37.3 3.206 145.9 0.102 65.9 0.934 -20.5 600 0.810 -53.6 2.942 131.2 0.139 56.3 0.870 -29.0 800 0.728 -69.4 2.711 117.8 0.166 48.6 0.811 -35.5 1000 0.667 -82.5 2.449 107.0 0.187 42.5 0.763 -40.9 1200 0.605 -95.8 2.252 96.9 0.199 37.3 0.715 -45.7 1400 0.561 -106.1 2.061 88.1 0.207 33.5 0.673 -49.4 1600 0.518 -117.2 1.909 79.5 0.212 30.6 0.638 -53.4 1800 0.492 -127.5 1.766 72.2 0.215 28.6 0.611 -56.5 2000 0.465 -137.9 1.658 65.2 0.217 27.6 0.592 -59.9
2SC5245A no. a1074-6/8 embossed taping speci cation 2SC5245A-4-tl-e
2SC5245A no. a1074-7/8 outline drawing land pattern example 2SC5245A-4-tl-e mass (g) unit 0.006 * for reference mm unit: mm 0.65 0.65 2.1 0.7 1.0
2SC5245A ps no. a1074-8/8 this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
|
